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High performance GaInAs/AlGaAs quantum-dot light emitting diodes and lasers

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4 Author(s)
Schafer, F. ; Dept. of Tech. Phys., Wurzburg Univ., Germany ; Klopf, F. ; Reithmaier, J.P. ; Forchel, A.

We have fabricated GaInAs/AlGas single layer quantum-dot light emitting diodes and lasers by self-organized growth in a molecular beam epitaxy system. Due to the use of migration enhanced epitaxy GaInAs/GaAs quantum-dot electroluminescence with high efficiency at a wavelength of 1.3 μm was achieved. The lasers show emission at 0.94 μm and 0.99 μm with low threshold current densities (Jth=144 A/cm2) and high internal quantum efficiencies (95%). Up to a device temperature of 214°C ground state lasing was obtained

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Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

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