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Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP-InGaAsP material

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10 Author(s)
Qian, Y.H. ; Dept. of Electron. & Electr. Eng., Glasgow Univ., UK ; Owen, M. ; Bryce, A.C. ; Marsh, J.H.
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We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high vertical profile. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall

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Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

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