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TCAD-prototyping with new accurate worst-case definition for a 0.2 micron CMOS-ASIC process

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5 Author(s)
Kunitomo, H. ; Hitachi ULSI Syst. Ltd., Tokyo, Japan ; Sato, H. ; Tsuneno, K. ; Ikematsu, R.
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An industrial statistical worst case modeling process for 0.2 μm CMOS is presented. It is based on new TCAD-prototyping with efficient correlation analysis for CMOS performance goals under process variability. Since the manufacturing process undergoes ongoing improvement, well-calibrated TCAD is primary tool to construct realistic performance corner models. A robust TCAD calibration method is one of the keys to achieving accurate prediction. Statistically least conservative “worst case” conditions are newly identified, which state that 99.7% of device performance is contained between the FF (fast fast) and SS (slow slow) worst corners. This reduces the design guardband by 10% compared with conventional worst case approaches

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Statistical Metrology, 1999. IWSM. 1999 4th International Workshop on

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