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A new “critical-current at linear-threshold” method for direct extraction of deep-submicron MOSFET effective channel length

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3 Author(s)
Zhou, X. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore ; Lim, K.Y. ; Lim, D.

A novel method for direct extraction of deep-submicron MOSFET effective channel length is proposed, which requires only a single measurement of the “critical-current at linear-threshold” (“Icrit@Vt0”) based on the maximum-g m definition. With a simple calibration of the channel sheet resistance from the long-channel Icrit data, the effective channel length of any short-channel device on the same wafer can be determined with one measurement of Icrit@Vt0. Meanwhile, an averaged (modeled) effective channel length can be obtained from the same data set with a simple algorithm, which can be used for device/circuit modeling

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Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 7 )