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Intrinsic 1/f device noise reduction and its effect on phase noise in CMOS ring oscillators

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6 Author(s)
Gierkink, S.L.J. ; MESA Res. Inst., Twente Univ., Enschede, Netherlands ; Klumperink, E.A.M. ; van der Wel, A.P. ; Hoogzaad, G.
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This paper gives experimental proof of an intriguing physical effect: periodic on-off switching of MOS transistors in a CMOS ring oscillator reduces their intrinsic 1/f noise and hence the oscillator's close-in phase noise. More specifically, it is shown that the 1/f3 phase noise is dependent on the gate-source voltage of the MOS transistors in the off state. Measurement results, corrected for waveform-dependent upconversion and effective bias, show an 8-dB-lower 1/f3 phase noise than expected. It will be shown that this can be attributed to the intrinsic 1/f noise reduction effect due to periodic on-off switching

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:34 ,  Issue: 7 )

Date of Publication:

Jul 1999

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