By Topic

An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Li, R. ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Cai, S.J. ; Wong, L. ; Chen, Y.
more authors

An Al/sub 0.3/Ga/sub 0.7/N/GaN heterostructure field effect transistor (HFET) grown on semi-insulating SiC with an 0.2-μm gate length is reported. A source-drain ohmic contact resistance of 0.15-/spl Omega/-mm was achieved through the use of high Al content and high n-type doping (1E19 cm/sup -3/) in the AlGaN donor layer and optimized metallization procedures. We obtained a maximum transconductance of 260 mS/mm, a saturated current density of 1.2 A/mm, and a maximum oscillation frequency in excess of 107 GHz in the devices. The results are one of the best achieved up to now, and they will open up the potential for the applications of AlGaN/GaN HFET's in high-power microwave radar, remote sensing, and communications.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 7 )