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Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12-μm atmospheric window

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5 Author(s)
Mohseni, H. ; Centre for Quantum Devices, Northwestern Univ., Evanston, IL, USA ; Wojkowski, J. ; Razeghi, M. ; Brown, G.
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We report on the growth and characterization of type-II infrared detectors with an InAs-GaSb superlattice active layer for the 8-12-μm atmospheric window at 300 K. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. Photoconductive detectors fabricated from the superlattices showed 80% cutoff at about 12 μm at room temperature. The responsivity of the device is about 2 mA/W with a 1-V bias (E=5 V/cm) and the maximum measured detectivity of the device is 1.3×108 cm.Hz1/2/W at 11 μm at room temperature. The detector shows very weak temperature sensitivity. Also, the extracted effective carrier lifetime, τ=26 ns, is an order of magnitude longer than the carrier lifetime in HgCdTe with similar bandgap and carrier concentration

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Quantum Electronics, IEEE Journal of  (Volume:35 ,  Issue: 7 )