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Optically pumped continuous-wave operation of InAlGaAs-InAlAs-InP based 1.55 μm vertical-cavity surface-emitting laser with SiO2 -TiO2 dielectric mirror

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5 Author(s)
Jong-Hyeob Back ; Dept. of Mater. Sci. & Eng., Korea Univ., Seoul, South Korea ; Han, Won Seok ; Cho, Hyung Koun ; Lee, Bun
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A vertical-cavity surface-emitting laser operating at 1.55 μm has been demonstrated by CW photopumping up to 260 K. The structure consists of an InAlGaAs-InAlAs bottom mirror grown on InP substrate, a 2λ thick active region which has a periodic gain structure with 27 InAlGaAs-InGaAs quantum wells, and an SiO2-TiO2 dielectric top mirror. The input threshold power density has a minimum value of 3.4 kW/cm2 at 220 K

Published in:

Electronics Letters  (Volume:35 ,  Issue: 10 )