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Charge-and-split sense amplifier for multilevel nonvolatile memories

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5 Author(s)
Torelli, G. ; Dipartimento di Elettronica, Pavia Univ., Italy ; Calligaro, C. ; Manstretta, A. ; Pierin, A.
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A low-voltage sense amplifier for multilevel (ML) nonvolatile memories is presented. It consists of a fully-differential current-to-voltage (I-V) converter followed by a differential amplifier. A crosscoupled NMOS pair is included to prevent simultaneous saturation of the two outputs of the I-V converter, thereby relaxing the timing requirements for output data latching. Experimental evaluations of a memory test chip demonstrated the high suitability of the amplifier for ML sensing

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Electronics Letters  (Volume:35 ,  Issue: 10 )