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High-temperature sigma-delta modulator in thin-film fully-depleted SOI technology

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3 Author(s)
Viviani, A. ; Microelectron. Lab., Katholieke Univ., Leuven, Belgium ; Flandre, D. ; Jespers, P.

A second-order sigma-delta (ΣΔ) modulator for high-temperature (HT) applications is presented. The modulator exploits the advantages of the fully-depleted (FD) SOI CMOS technology as well as a dedicated design procedure in order to extend the temperature range of classical architectures up to 300°C, thereby avoiding compensation circuits which add to the power dissipation

Published in:
Electronics Letters  (Volume:35 ,  Issue: 9 )

Date of Publication: 29 Apr 1999

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