By Topic

Very low-distortion fully differential switched-current memory cell

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Martins, J.M. ; IST, Tech. Univ. Lisbon, Portugal ; Dias, V.F.

This paper proposes a very low-distortion fully differential switched-current memory cell, based on the opening of the memory switch at a constant voltage. We show that in the previously proposed single-ended Nairn cell, this principle does not lead to low harmonic distortion because the distortion is also a function of the signal-independent clock injection. SPICE simulations indicate that the proposed cell achieves a distortion level of -90 dB to -100 dB, which is about two orders of magnitude below the level achieved with basic switched-current cells. The performance of the proposed cell is near that of state-of-the-art switched-capacitor circuits

Published in:

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on  (Volume:46 ,  Issue: 5 )