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Noise parameter extraction of GaAs MESFETs and PHEMTs from swept noise figure measurements

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1 Author(s)

A new method of measuring and extracting bias dependent noise parameters for GaAs MESFETs and PHEMTs is presented. This technique only requires noise figure and S-parameter measurements over frequency. This eliminates the need for time-consuming traditional sourcepull measurements and facilitates rapid noise parameter extraction. This technique makes the extraction of bias-dependent noise models of MESFETs and PHEMTs practical, for the first time, in a production test environment.

Published in:

ARFTG Conference Digest, 1998. Computer-Aided Design and Test for High-Speed Electronics. 52nd

Date of Conference:

3-4 Dec. 1998