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A new method of measuring and extracting bias dependent noise parameters for GaAs MESFETs and PHEMTs is presented. This technique only requires noise figure and S-parameter measurements over frequency. This eliminates the need for time-consuming traditional sourcepull measurements and facilitates rapid noise parameter extraction. This technique makes the extraction of bias-dependent noise models of MESFETs and PHEMTs practical, for the first time, in a production test environment.