Cart (Loading....) | Create Account
Close category search window
 

Noise parameter extraction of GaAs MESFETs and PHEMTs from swept noise figure measurements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)

A new method of measuring and extracting bias dependent noise parameters for GaAs MESFETs and PHEMTs is presented. This technique only requires noise figure and S-parameter measurements over frequency. This eliminates the need for time-consuming traditional sourcepull measurements and facilitates rapid noise parameter extraction. This technique makes the extraction of bias-dependent noise models of MESFETs and PHEMTs practical, for the first time, in a production test environment.

Published in:

ARFTG Conference Digest, 1998. Computer-Aided Design and Test for High-Speed Electronics. 52nd

Date of Conference:

3-4 Dec. 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.