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Finite element and Monte Carlo simulation of submicrometer silicon n-MOSFET's

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3 Author(s)
Hadji, D. ; Lab. d''Electrotech. de Grenoble, CNRS, St. Martin d''Heres, France ; Marechal, Y. ; Zimmermann, J.

A three-dimensional hybrid simulator suitable for modeling very small semiconductor devices has been developed in which Monte Carlo and finite element methods are combined. The finite element method is used for solving the Poisson equation, and the Monte Carlo method is used for solving the carrier transport equation. Numerical results performed on a submicron n-channel MOSFET by this approach are reported

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Magnetics, IEEE Transactions on  (Volume:35 ,  Issue: 3 )