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Characterization of contact electromechanics through capacitance-voltage measurements and simulations

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3 Author(s)
Chan, E.K. ; Center for Integrated Syst., Stanford Univ., CA, USA ; Garikipati, K. ; Dutton, R.W.

Electrostatically actuated polysilicon beams fabricated in the multiuser MEMS process (MUMPs) are studied, with an emphasis on the behavior when the beam is in contact with an underlying silicon nitride dielectric layer. Detailed two-dimensional (2-D) electromechanical simulations, including the mechanical effects of stepups, stress-stiffening and contact, as well as the electrical effects of fringing fields and finite beam thickness, are performed. Comparisons are made to quasi-2-D and three-dimensional simulations. Pull-in voltage and capacitance-voltage measurements together with 2-D simulations are used to extract material properties. The electromechanical system is used to monitor charge buildup in the nitride which is modeled by a charge trapping model. Surface effects are included in the simulation using a compressible-contact-surface model. Monte Carlo simulations reveal the limits of simulation accuracy due to the limited resolution of input parameters

Published in:

Microelectromechanical Systems, Journal of  (Volume:8 ,  Issue: 2 )

Date of Publication:

Jun 1999

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