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Fast organic thin-film transistor circuits

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3 Author(s)
Klauk, H. ; Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA ; Gundlach, D.J. ; Jackson, T.N.

We have fabricated organic thin-film transistors and integrated circuits using pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam sputtered silicon dioxide as the gate dielectric and a double-layer photoresist process to isolate devices. These transistors have carrier mobility near 0.5 cm2/V-s and on/off current ratio larger than 10/sup 7/. Using a level-shifting design that allows circuits to operate over a wide range of threshold voltages, we have fabricated ring oscillators with propagation delay below 75 μs per stage, limited by the level-shifting circuitry. When driven directly, inverters without level shifting show submicrosecond rise and fall time constants.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 6 )