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Novel bi-directional tunneling program/erase NOR (BiNOR)-type flash EEPROM

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5 Author(s)
Yang, E.C.-S. ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Cheng-Jye Liu ; Ming-Chi Liaw ; Tien-Sheng Chao
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This paper presents a novel flash memory cell, BiNOR, suitable for high-speed, low-power, and high-performance application. The proposed BiNOR structure allows random access, channel Fowler-Nordheim (FN) tunneling program/erase in a NOR-type array (previously, channel FN tunneling program/erase could only be implemented in a NAND array). Using the designated localized P-well structure, BiNOR realizes the hot hole free, low-power bi-directional channel FN tunneling program and erase, and alleviates the oxide instability induced during source erase in the NOR-type flash memory

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Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 6 )