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Modeling the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor

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2 Author(s)
Wartenberg, S.A. ; Hewlett-Packard Co., Newark, CA, USA ; Westgate, C.R.

This paper compares the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor (HBT) to that of a silicon bipolar junction transistor (BJT) fabricated with identical geometry. Derived is an isothermal expression for the forward Early voltage specifically suited to the base composition of a SiGe HBT. The expression includes two fit factors, one for the Si1-xGex alloy and the other for the nonuniform doping density. The fit factors are functions of the device temperature and are determined through pulsed bias measurements

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Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 6 )