By Topic

Numerical analysis of an anomalous current assisted by locally generated deep traps in pn junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yamaguchi, K. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Teshima, T. ; Mizuta, H.

An anomalous current observed in reverse-biased pn junctions, highly-integrated with an extremely small cells, is analyzed with the help of device simulation. At the tail of the appearance probability, junction currents showed a steep increase and saturation as a function of applied bias. A model of localized deep-traps is proposed to explain the anomaly. The deep traps are formulated as a g/r center based on the Shockley-Read-Hall model. Simulation results clarify the mechanism of the current anomaly: when deep traps are included in the depletion layer, they act as a carrier generation center and the junction current steeply increases. The magnitude of the current after saturation is discussed, focusing on capture rate and trap density. Further, experimental features for the anomaly, e.g., the fluctuation in the critical voltage at which the current begins to increase and the structure dependence of the anomalous current, are also discussed using the present deep trap model

Published in:

Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 6 )