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A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects

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6 Author(s)
Jacunski, M.D. ; Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA ; Shur, M.S. ; Owusu, A.A. ; Ytterdal, T.
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A semi-empirical analytical model for the DC characteristics of both n- and p-channel polysilicon thin-film transistors is described. The model is suitable for implementation in a SPICE circuit simulator. Our semi-empirical approach results in a physically based model with a minimum of parameters, which are readily related to the device structure and fabrication process. The intrinsic DC model describes all four regimes of operation: leakage, subthreshold, above threshold, and kink. The effects of temperature and channel length are also included in the short-channel model

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Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 6 )