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Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors

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8 Author(s)
Sotoodeh, M. ; Dept. of Electron. Eng., King''s Coll., London, UK ; Khalid, A.H. ; Hong Sheng ; Amin, F.A.
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A new method is presented to evaluate the base and collector transit times, τB and τC in heterojunction bipolar transistors (BBT's) from the phase and magnitude of the common-base current gain, α(ω), which itself was directly extracted from measured S-parameter data. The method is applied to InGaP/GaAs single and double HBT's. A smaller cutoff frequency in the latter device is attributed to τB and τC due to two effects: trapping of electrons in the conduction band triangular barrier existing at the base-collector (B-C) heterojunction and smaller saturation velocity of electrons in InGaP as compared to GaAs. Finally, a new B-C design of InGaP/GaAs DNBT's is proposed to partially compensate the transit time effects. Numerical simulation of the cutoff frequency demonstrates the superiority of the proposed structure for high-frequency applications

Published in:

Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 6 )

Date of Publication:

Jun 1999

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