Referenced Items are not available for this document.
The noise performances of a new base-collector self-aligned technology of double-heterojunction single-finger InGaAs-InP bipolar transistor are investigated at 300 K. Noise parameter variations are studied versus frequency in the 2-18 GHz range, versus collector current and emitter area. A low minimum noise figure Fmin=0.6 dB is demonstrated at 2 GHz with a 4.8-μm2 emitter. Variations of Fmin show a minimum versus collector current. The high cutoff frequencies of the devices limit the increase of Fmin versus frequency
Published in:
Microwave and Guided Wave Letters, IEEE
(Volume:9
,
Issue:
5
)
Date of Publication: May 1999
- Page(s):
- 195 - 197
- ISSN :
- 1051-8207
- INSPEC Accession Number:
- 6274398
- Digital Object Identifier :
- 10.1109/75.766762
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 1999
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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