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Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors

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8 Author(s)
V. Danelon ; Inst. d'Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France ; F. Aniel ; J. L. Benchimol ; J. Mba
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The noise performances of a new base-collector self-aligned technology of double-heterojunction single-finger InGaAs-InP bipolar transistor are investigated at 300 K. Noise parameter variations are studied versus frequency in the 2-18 GHz range, versus collector current and emitter area. A low minimum noise figure Fmin=0.6 dB is demonstrated at 2 GHz with a 4.8-μm2 emitter. Variations of Fmin show a minimum versus collector current. The high cutoff frequencies of the devices limit the increase of Fmin versus frequency.

Published in:

IEEE Microwave and Guided Wave Letters  (Volume:9 ,  Issue: 5 )