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The noise performances of a new base-collector self-aligned technology of double-heterojunction single-finger InGaAs-InP bipolar transistor are investigated at 300 K. Noise parameter variations are studied versus frequency in the 2-18 GHz range, versus collector current and emitter area. A low minimum noise figure Fmin=0.6 dB is demonstrated at 2 GHz with a 4.8-μm2 emitter. Variations of Fmin show a minimum versus collector current. The high cutoff frequencies of the devices limit the increase of Fmin versus frequency.