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Lattice strain in sputter-deposited Fe-N-Si films: effects of interstitial mobility

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2 Author(s)
K. Uchiyama ; R&D Center, TDK Corp., Nagano, Japan ; R. C. O'Handley

Fe-N-Si films have been sputter-deposited in flowing nitrogen (0.3 sccm). Asymmetric X-ray diffraction from the as-deposited films reveals interplanar spacings dhkl that are strong functions of diffracting plane orientation θ relative to the film surface and follow dhklobs(θ)=⟨dhklobs ⟩+Δdhklobs cos 2θ. The sign of Δdhklobs suggests a strong biaxial compressive stress in the film plane. The θ-dependent part of d 200 is observed to be twice what it should be compared to that of d110 based on a simple elastic analysis. By taking account of the mobility of the nitrogen interstitials, the d200 and d110 data become consistent, provided 10% of the nitrogen concentration in the films (10.1 atomic %) is mobile

Published in:

IEEE Transactions on Magnetics  (Volume:35 ,  Issue: 3 )