Referenced Items are not available for this document.
A novel concept for achieving high electrical withstand capability on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600 amperes (at peak collector voltage=2500 V, Tj=125°C) and the short circuit capability of over 50 μs (at VCC=1600 V, Tj=125°C) are successfully attained by a newly developed power pack IGBT. In this paper, simulation results based upon the novel design concept are presented. Furthermore, experimental results are demonstrated to corroborate the simulation results
Published in:
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Date of Conference: 1999
- Page(s):
- 177 - 180
- Meeting Date :
- 26 May 1999-28 May 1999
- ISSN :
- 1063-6854
- Print ISBN:
- 0-7803-5290-4
- INSPEC Accession Number:
- 6475716
- Conference Location :
- Toronto, Ont.
- Digital Object Identifier :
- 10.1109/ISPSD.1999.764091
- Product Type:
- Conference Publications
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