By Topic

0.35 μm, 43 μΩcm2, 6 mΩ power MOSFET to power future microprocessor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Sun, N.X. ; Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA ; Huang, A.Q. ; Lee, F.C.

In this paper, a lateral power MOSFET using 0.35 μm VLSI CMOS technology is demonstrated to have a 6 mΩ on-resistance and a gate charge of 2.7 nC. For high frequency, low voltage power switching conversion applications, the deep sub-micron CMOS/BiCMOS based technology is clearly superior to conventional vertical power MOSFET technology

Published in:

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Date of Conference: