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Characteristics of InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy

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5 Author(s)
Zhang, G. ; Tampere University of Technology ; Outchinnikov, A. ; Nappi, J. ; Asonen, H.
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Strained-layer InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy (GSMBE) are reported. The characteristics of these lasers are comparable to those of the best results of InGaAs/GaAs/AlGaAs lasers.

Published in:

Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International

Date of Conference:

21-25 Sept. 1992

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