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A 38-GHz push-push oscillator based on 25-GHz fT BJT's

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3 Author(s)
Sinnesbichler, F.X. ; Lehrstuhl fur Hochfrequenztech., Tech. Univ. Munchen, Germany ; Geltinger, H. ; Olbrich, G.R.

In this work, we present a 38 GHz push-push oscillator based on low-cost state-of-the-art silicon bipolar junction transistors (BJTs) with transit frequencies of approximately 25 GHz. The push-push principle allows the extension of the usable frequency range of the well-established silicon bipolar technology (with its specific advantages, as, for example, a low 1/f-noise) into the K and the Ka bands. The circuitry has been fabricated in thin film technology on a 10-mil alumina substrate. The output power of the oscillator is -11.5 dBm with a single-sideband phase noise of -80 dBc/Hz at an offset frequency of 100 kHz

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:9 ,  Issue: 4 )