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V-band monolithic low-noise amplifiers using ion-implanted n/sup +/-self-aligned GaAs MESFETs

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4 Author(s)
Onodera, K. ; NTT Optical Network Syst. Labs., Kanagawa, Japan ; Sugitani, S. ; Nishimura, K. ; Tokumitsu, M.

V-band monolithic low-noise amplifiers (LNAs) were successfully fabricated using a manufacturable GaAs MESFET process. Ion-implanted n/sup +/-self-aligned GaAs MESFETs, which are used to make digital ICs, were employed. A fabricated single-stage LNA with a 0.13 μm Au/WSiN gate demonstrated a noise figure of 5 dB at 60 GHz with an associated gain of 7 dB. A two-stage LNA achieved a noise figure of 6 dB at 60 GHz with an associated gain of 14 dB. This is the first demonstration of ion-implanted n/sup +/-self-aligned GaAs MESFETs for millimeter-wave monolithic integrated circuits (MIMICs). The results are among the best ever reported for V-band GaAs-MESFET amplifiers.

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:9 ,  Issue: 4 )