By Topic

V-band monolithic low-noise amplifiers using ion-implanted n/sup +/-self-aligned GaAs MESFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Onodera, K. ; NTT Optical Network Syst. Labs., Kanagawa, Japan ; Sugitani, S. ; Nishimura, K. ; Tokumitsu, M.

V-band monolithic low-noise amplifiers (LNAs) were successfully fabricated using a manufacturable GaAs MESFET process. Ion-implanted n/sup +/-self-aligned GaAs MESFETs, which are used to make digital ICs, were employed. A fabricated single-stage LNA with a 0.13 μm Au/WSiN gate demonstrated a noise figure of 5 dB at 60 GHz with an associated gain of 7 dB. A two-stage LNA achieved a noise figure of 6 dB at 60 GHz with an associated gain of 14 dB. This is the first demonstration of ion-implanted n/sup +/-self-aligned GaAs MESFETs for millimeter-wave monolithic integrated circuits (MIMICs). The results are among the best ever reported for V-band GaAs-MESFET amplifiers.

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:9 ,  Issue: 4 )