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Molecular dynamics simulations of ion-induced rearrangement of ultrathin oxide films on silicon

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2 Author(s)
Kubota, A.A. ; Dept. of Chem. Eng., Houston Univ., TX, USA ; Economou, D.J.

We present three-dimensional images of ion-irradiated ultrathin oxide films on silicon surfaces, generated from molecular dynamics simulations. The surface has the tendency to form oxide islands as the film is sputtered away by 100 eV Ar+ ions. We also show an image of a “peeling” oxide strand which forms occasionally as a result of ions impacting at an angle of 45° from normal

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Plasma Science, IEEE Transactions on  (Volume:27 ,  Issue: 1 )