By Topic

Molecular dynamics simulations of ion-induced rearrangement of ultrathin oxide films on silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
A. A. Kubota ; Dept. of Chem. Eng., Houston Univ., TX, USA ; D. J. Economou

We present three-dimensional images of ion-irradiated ultrathin oxide films on silicon surfaces, generated from molecular dynamics simulations. The surface has the tendency to form oxide islands as the film is sputtered away by 100 eV Ar+ ions. We also show an image of a “peeling” oxide strand which forms occasionally as a result of ions impacting at an angle of 45° from normal

Published in:

IEEE Transactions on Plasma Science  (Volume:27 ,  Issue: 1 )