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Radical and electron densities in a high plasma density-chemical vapor deposition reactor from a three-dimensional simulation

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2 Author(s)
E. R. Keiter ; Sandia Nat. Labs., Albuquerque, NM, USA ; M. J. Kushner

High plasma density chemical vapor deposition (HPD-CVD) is being developed for producing interlevel dielectrics in microelectronics fabrication. We present images of radical and electron densities in an Ar/SiH4 HPD-CVD inductively coupled reactor produced by a three-dimensional equipment model. The silane feedstock and silyl (SiH 3) radicals are rapidly dissociated, resulting is densities which are maximum near the nozzles. The silylene (SiH2) radicals, the most fragmented species included in the simulation, are the most uniformly distributed

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IEEE Transactions on Plasma Science  (Volume:27 ,  Issue: 1 )