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Reduction of threshold voltage in metal-induced-laterally-crystallized thin film transistors

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3 Author(s)
Man Wong ; Center for Display Res., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong ; G. A. Bhat ; H. S. Kwok

In conventional metal-induced-laterally crystallized (MILC) thin film transistors (TFTs), the source and drain regions are crystallized by metal-induced crystallization (MIC) self-aligned to the edges of the gate electrodes. A distinct grain boundary exists at the border between the MILC and the MIC regions. It will be shown that the apparent threshold voltage (Vt) of the MILC TFTs is affected by the presence of these MILC/MIC grain boundaries (MMGBs) at the edges of the transistor channels. Furthermore, Vt can be reduced either by eliminating the MMGBs from both the source and drain junctions or by hydrogen passivation of the traps in the MMGBs

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Information Display, 1999. ASID '99. Proceedings of the 5th Asian Symposium on

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