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GaAs vertical JFET operated in bipolar mode (GaAs BMFET)

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6 Author(s)
Schweeger, G. ; Inst. fur Hochfrequenztech., TH Darmstadt, Germany ; Cocorullo, G. ; Della Corte, F.G. ; Hartnagel, H.L.
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The first experimental results of current amplification in a vertical JFET on GaAs operated in the bipolar mode are presented. hfe as high as 30 has been measured at high current densities. The technology of this device is described and possible applications are discussed.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 12 )