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MOS amplifier gain-bandwidth enhancement using body signals

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1 Author(s)
Shoucair, F.S. ; Dept. of Electr. Eng., Brown Univ., Providence, RI, USA

A technique for increasing the gain-bandwidth product (GBW) of integrated MOS amplifiers is presented. The scheme consists in simultaneously applying signals to the gate and to the body (substrate) terminals of the input MOSFETs. The 'body effect' is thereby used to advantage, which is generally regarded as a nonideal effect to be avoided. The proposed method provides improvement over the traditional two-stage cascading technique and offers the additional advantage of distortion reduction.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 12 )

Date of Publication:

6 June 1991

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