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A technique for increasing the gain-bandwidth product (GBW) of integrated MOS amplifiers is presented. The scheme consists in simultaneously applying signals to the gate and to the body (substrate) terminals of the input MOSFETs. The 'body effect' is thereby used to advantage, which is generally regarded as a nonideal effect to be avoided. The proposed method provides improvement over the traditional two-stage cascading technique and offers the additional advantage of distortion reduction.