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Threshold voltage shift caused by copper contamination

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4 Author(s)
Vermeire, B. ; Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA ; Peterson, C.A. ; Parks, H.G. ; Sarid, D.

High resolution Fowler-Nordheim field emission mapping, a relatively new technique that makes use of an atomic force microscope with a conducting tip (Ruskell et al., 1996), of thin thermal SiO2 layers was used to investigate the yield and reliability implications of transistor scaling when trace amounts of copper contamination are present on the silicon surface prior to gate oxidation. A new failure mechanism is revealed that will start to manifest itself in 0.13 μm technologies

Published in:

Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International

Date of Conference: