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An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFETs

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5 Author(s)
Chung, S.S. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chen, S.J. ; Yih, C.M. ; Yang, W.-J.
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In this paper, an accurate criterion has been proposed for reliability evaluation of state-of-the-art deep-submicron S/D extension n-MOSFETs. A new monitor for hot carrier reliability evaluation has been developed using total values of the number of interface states Nit in the effective channel length region, instead of commonly used substrate current (IB), impact ionization rate (ID/IB), or peak/average Nit values. An accurate degradation model has thus been developed based on the Nit distribution and mobility scattering effect. Moreover, this approach has been successfully used to demonstrate the feasibility for gate-engineering studies

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Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International

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