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A novel fast technique for detecting voiding damage in IC interconnects

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3 Author(s)
Foley, Sean ; Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland ; Floyd, L. ; Mathewson, A.

A novel technique has been developed that is sensitive to the degree of voiding damage induced in a wide-line interconnect test structure. The technique is based on the measurement of the scattering parameters (S-parameters) of a simple metal-line test structure over a range of high frequencies. The transmission-line parameter, G (leakage conductance), which is calculated from the S-parameter measurements, is shown to be sensitive to distributed voiding, especially in wider lines. This is significant for the following reasons: (1) the measurement is fast, at a few seconds per test structure; (2) it can be performed at wafer level; (3) it does not rely on overstressing of the metallization; and (4) it is sensitive to the amount of voiding damage present in wide interconnect lines. Potential applications for this technique are: (a) an in-line statistical reliability control (SRC) test for the detection of stress voids induced during processing, and (b) an in-line SRC test for electromigration when preceded by a suitable current pre-stress step

Published in:

Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International

Date of Conference: