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A study of Ta2O5/rugged Si capacitor of 23 μC/μm2 applied to high-density DRAMs using sub-0.2 μm process

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22 Author(s)
Y. Ohji ; Device Dev. Center, Hitachi Ltd., Tokyo, Japan ; S. Iijima ; A. Saito ; H. Miki
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The Ta2O5/rugged Si capacitor was shown to be remarkably reliable for mass production of high-density DRAMs. Our investigation with large scale test capacitors and full-scale 64-Mbit and 256-Mbit DRAMs confirmed that it has low leakage current, low defect density, good retention characteristics, and superior TDDB lifetime for high-density DRAMs

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Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International

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