Referenced Items are not available for this document.
The Ta2O5/rugged Si capacitor was shown to be remarkably reliable for mass production of high-density DRAMs. Our investigation with large scale test capacitors and full-scale 64-Mbit and 256-Mbit DRAMs confirmed that it has low leakage current, low defect density, good retention characteristics, and superior TDDB lifetime for high-density DRAMs
Published in:
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Date of Conference: 1999
- Page(s):
- 12 - 18
- Meeting Date :
- 23 Mar 1999-25 Mar 1999
- Print ISBN:
- 0-7803-5220-3
- INSPEC Accession Number:
- 6396379
- Conference Location :
- San Diego, CA
- Digital Object Identifier :
- 10.1109/RELPHY.1999.761585
- Product Type:
- Conference Publications
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