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Tantalum oxide thin-film capacitor suitable for being incorporated into an integrated circuit package

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4 Author(s)
Yoshino, H. ; Sumitomo Electr. Ind. Ltd., Hyogo, Japan ; Ihara, T. ; Yamanaka, S. ; Igarashi, T.

The authors have developed a tantalum oxide thin-film capacitor that is compatible with die-bonding by gold-silicon solder and hermetic glass-sealed packaging. Its lower electrode is a metal plate, and the upper one is a metal thin film. A Ta2O5 thin-film capacitor that uses a rolled tape of iron-42% nickel alloy as the metal plate and aluminium as the metal thin film is described. This capacitor can withstand a temperature of 500°C for more than ten minutes. Its thermal coefficient of capacitance is less than 400 p.p.m./°C in the range from 25°C to 150°C. The dependence of capacitance on frequency is very small in the range from 1 MHz to 1 GHz. The dielectric loss tangent is less than 0.5% at 1 MHz. The authors compared with Ta 2O5 thin-film capacitor's performance with that of a barium-titanate-based single-layer chip capacitor by measuring the gain of an amplifier composed of an amplifier IC chip and a capacitor in a leadless chip carrier package. Incorporating Ta2O5 thin-film capacitors into the IC package was confirmed to be a more effective decoupling technique, particularly above than 100 Mhz

Published in:

Electronic Manufacturing Technology Symposium, 1989, Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International

Date of Conference:

26-28 Apr 1989

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