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Design, characterization and modelling of a CMOS magnetic field sensor

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5 Author(s)
Latorre, L. ; LIRMM, Univ. des Sci. et Tech. du Languedoc, Montpellier, France ; Bertrand, Y. ; Hazard, P. ; Pressecq, F.
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This paper presents both the design and the characterization of a full CMOS magnetic field sensor. As an alternative to Hall effect sensors, it acts as a microscopic cantilever, deformed under the action of the Lorentz force.

Published in:

Design, Automation and Test in Europe Conference and Exhibition 1999. Proceedings

Date of Conference:

9-12 March 1999

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