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Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process

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4 Author(s)
Tan Fu Lei ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chen, S.K. ; Ming Fang Wang ; Tien Sheng Chao

This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combing N/sub 2/O nitridation and chemical mechanical polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Q/sub hd/ (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 5 )