Referenced Items are not available for this document.
Poly-Si and poly-Si/sub 0.75/Ge/sub 0.25/-gated PMOS transistors with a very thin gate oxide of 29 /spl Aring/ were fabricated. In addition to reduced gate-depletion effect (GDE) and reduced boron penetration, more favorable I/sub d/-V/sub d/ characteristics were observed for the poly-SiGe-gated transistors than poly-Si-gated transistors. This and the underlying superior hole mobility are explained with a universal mobility model based on V/sub g/, T/sub ox/, V/sub th/ and V/sub th/. Both reduced GDE and superior hole mobility contribute to the enhanced performance.
Published in:
Electron Device Letters, IEEE
(Volume:20
,
Issue:
5
)
Date of Publication: May 1999
- Page(s):
- 232 - 234
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 6248327
- Digital Object Identifier :
- 10.1109/55.761024
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 1999
- Sponsored by :
- IEEE Electron Devices Society
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