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Carrier lifetime extraction in fully depleted dual-gate SOI devices

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5 Author(s)
Ernst, T. ; Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France ; Vandooren, A. ; Cristoloveanu, S. ; Colinge, J.P.
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A new method for extracting the carrier recombination lifetime in dual-gate silicon-on-insulator (SOI) structures is proposed. The experiment, model, and numerical simulations indicate that an excess forward current is obtained when carrier recombination occurs in the whole film volume.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 5 )