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The MOS depletion-mode thyristor: a new MOS-controlled bipolar power device

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2 Author(s)
Baliga, B.Jayant ; Corporate Res. & Dev. Center, Gen. Electric Co., Schenectady, NY, USA ; Hsueh-Rong Chang

A new MOS-bipolar power device in which forced-gate turn-off is achieved using a depletion region formed by an MOS gate structure is described. This device, called the depletion-mode thyristor (DMT), offers many highly desired features for high-voltage power switching applications: a) low ON-state drop, b) high input impedance, c) three-terminal operation, d) equivalent complementary devices, and e) high maximum controllable current. Experimental verification of device operation has been achieved using a UMOS gate technology.<>

Published in:

Electron Device Letters, IEEE  (Volume:9 ,  Issue: 8 )

Date of Publication:

Aug. 1988

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