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Prediction of electronic component temperatures at high altitude using low altitude measurements

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1 Author(s)
Hall, D.A. ; IBM Corp., Austin, TX, USA

Analytical predictions of developing-flow, forced-air-cooled electronic component temperatures at high altitudes using near-sea-level temperature measurements are compared with the results of experiments performed at 198 m (650 ft) and 1646 m (5400 ft) above sea level. The correlation derived does not agree with correlations in the literature for fully developed laminar or turbulent two-dimensional flow over a constant-temperature flat plate, but predictions fall within +or-3.8% and -1.1% of measured temperatures, respectively. Altitude correction factors for ambient air preheat and module thermal resistances measured at 198 m are determined for 915 m (3000 ft), 1646 m (5400 ft), and 2135 m (7000 ft). An example of temperature prediction for 2135 m based on measurements made at 198 m is presented.<>

Published in:

Semiconductor Thermal and Temperature Measurement Symposium, 1989. SEMI-THERM V., Fifth Annual IEEE

Date of Conference:

7-9 Feb. 1989