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An efficient and accurate compact model for thin-oxide-MOSFET intrinsic capacitance considering the finite charge layer thickness

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4 Author(s)
Weidong Liu ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Xiaodong Jin ; King, Y. ; Chenming Hu

As the gate oxide thickness is vigorously scaled down, quantization-induced charge layer thickness in MOSFETs has to be considered for accurate MOSFET intrinsic capacitance modeling for circuit simulation. We report in this paper an analytical MOSFET intrinsic capacitance model incorporating the concept of charge layer thickness, which was developed based on the self-consistent solution of the Schrodinger and Poisson equations with Fermi-Dirac statistics. The results demonstrate that this model has excellent accuracy and simulation performance

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Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 5 )