Cart (Loading....) | Create Account
Close category search window

Quantum effects on the extraction of MOS oxide traps by 1/f noise measurements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Pacelli, Andrea ; Dipt. di Elettronica, Politecnico di Milano, Italy ; Villa, S. ; Lacaita, A.L. ; Perron, L.M.

1/f noise measurements can be a viable method for the characterization of the oxide state density in MOSFETs, being directly applicable to submicron-scale devices. In this work we address the impact of electron quantization and mobility fluctuations on the analysis of the 1/f noise results, assessing the precision of the approximations usually introduced in the extraction procedure. Numerical models are employed to account for quantization effects, both in the normal and the lateral directions with respect to the Si-SiO2 interface. Mobility fluctuations are analyzed by means of a state-of-the-art model for Coulomb-limited mobility. Results are reported for n-MOSFETs with a heavy channel doping. It is found that incomplete knowledge of the spatial location and nature (acceptor- or donor-like) of traps causes a substantial uncertainty in the extracted value of the absolute trap density

Published in:

Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 5 )

Date of Publication:

May 1999

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.