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Three-dimensional modeling of the erasing operation in a submicron flash-EEPROM memory cell

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3 Author(s)
Lorenzini, M. ; Dipt. di Elettronica Inf. e Sistemistica, Bologna Univ., Italy ; Vissarion, R. ; Rudan, M.

This paper addresses the modeling of the erasing operation in a realistic flash-EEPROM cell, based on a three-dimensional (3-D) device-simulation code in which models for higher-order physical effects have been incorporated, specifically, the Fowler-Nordheim (FN) and the band-to-band tunneling. The ability of the code to consistently determine the floating-gate potential is shown. The distribution of the band-to-band generation rate within the device during the erasing process is investigated. The experimental characteristics of the erasing process of a memory cell are successfully reproduced

Published in:

Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 5 )

Date of Publication:

May 1999

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