By Topic

Three-dimensional modeling of the erasing operation in a submicron flash-EEPROM memory cell

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Lorenzini, M. ; Dipt. di Elettronica Inf. e Sistemistica, Bologna Univ., Italy ; Vissarion, R. ; Rudan, M.

This paper addresses the modeling of the erasing operation in a realistic flash-EEPROM cell, based on a three-dimensional (3-D) device-simulation code in which models for higher-order physical effects have been incorporated, specifically, the Fowler-Nordheim (FN) and the band-to-band tunneling. The ability of the code to consistently determine the floating-gate potential is shown. The distribution of the band-to-band generation rate within the device during the erasing process is investigated. The experimental characteristics of the erasing process of a memory cell are successfully reproduced

Published in:

Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 5 )