By Topic

Low-frequency noise spectroscopy of polycrystalline silicon thin-film transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Angelis, C.T. ; Dept. of Phys., Thessaloniki Univ., Greece ; Dimitriadis, C.A. ; Brini, J. ; Kamarinos, G.
more authors

Polycrystalline silicon thin-film transistor (polysilicon TFT's) characteristics are evaluated by using a low-frequency noise technique. The drain current fluctuation caused by trapping and detrapping processes at the grain boundary traps is measured as the current spectral density. Therefore, the properties of the grain boundary traps can be directly evaluated by this technique. The experimental data show a transition from 1/f behavior to a Lorentzian noise. The 1/f noise is explained with an existing model developed for monocrystalline silicon based on fluctuations of the inversion charge near the silicon-oxide interface. The Lorentzian spectrum is explained by fluctuations of the grain boundary interface charge with a model based on a Gaussian distribution of the potential barriers over the grain boundary plane. Quantitative analysis of the 1/f noise and the Lorentzian noise yield the oxide trap density and the energy distribution of the grain boundary traps within the forbidden gap

Published in:

Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 5 )