Referenced Items are not available for this document.
Analytical modeling of the threshold voltage of a Si1-xGex/Si heterojunction pMOSFET has been performed using a quasi-two-dimensional (quasi-2-D) approach for the calculation of the potential. It is shown that the use of Si1-x Gex in the source region leads to an improvement in the short-channel behavior of deep submicron pMOSFETs. The VT roll-off can be substantially decreased by introducing a material dependent barrier between source and channel. Furthermore it will be proven that this advantage will become stronger when channel lengths are decreased toward the deep submicron regime
Published in:
Electron Devices, IEEE Transactions on
(Volume:46
,
Issue:
5
)
Date of Publication: May 1999
- Page(s):
- 933 - 939
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 6248104
- Digital Object Identifier :
- 10.1109/16.760400
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 1999
- Sponsored by :
- IEEE Electron Devices Society
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