By Topic

Modeling the short-channel threshold voltage of a novel vertical heterojunction pMOSFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Collaert, N. ; IMEC, Heverlee, Belgium ; de Meyer, K.

Analytical modeling of the threshold voltage of a Si1-xGex/Si heterojunction pMOSFET has been performed using a quasi-two-dimensional (quasi-2-D) approach for the calculation of the potential. It is shown that the use of Si1-x Gex in the source region leads to an improvement in the short-channel behavior of deep submicron pMOSFETs. The VT roll-off can be substantially decreased by introducing a material dependent barrier between source and channel. Furthermore it will be proven that this advantage will become stronger when channel lengths are decreased toward the deep submicron regime

Published in:

Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 5 )