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A CMOS bandgap reference circuit with sub-1-V operation

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7 Author(s)
Banba, H. ; Toshiba Corp., Yokohama, Japan ; Shiga, H. ; Umezawa, A. ; Miyaba, T.
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This paper proposes a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, In the conventional BGR circuit, the output voltage Vref is the sum of the built-in voltage of the diode Vf and the thermal voltage VT of kT/q multiplied by a constant. Therefore, Vref is about 1.25 V, which limits a low supply-voltage operation below 1 V. Conversely, in the proposed BGR circuit, Vref has been converted from the sum of two currents; one is proportional to Vf and the other is proportional to VT. An experimental BGR circuit, which is simply composed of a CMOS op-amp, diodes, and resistors, has been fabricated in a conventional 0.4-μm flash memory process. Measured Vref is 518±15 mV (3σ) for 23 samples on the same wafer at 27-125°C

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Solid-State Circuits, IEEE Journal of  (Volume:34 ,  Issue: 5 )