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Theory and experiment of In1-xGaxAsy P1-y and In1-x-yGaxAlyAs long-wavelength strained quantum-well lasers

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4 Author(s)
Minch, J. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Park, S.-H. ; Keating, T. ; Chuang, S.L.

We present a comprehensive model for the calculation of the bandedge profile of both the In1-xGaxAsyP1-y and In1-x-yGaxAlyAs quantum-well systems with an arbitrary composition. Using a many-body optical gain model, we compare the measured net modal gain for both material systems with calculations from the realistic band structure including valence band mixing effects. Calibrated measurements of the side light spontaneous emission spectrum based on its fundamental relation to the optical gain spectrum give values for the radiative current density. These measurements allow us to extract the relationship between total current density and carrier density. A fit of this relation yields values for the Auger coefficient for each material system

Published in:

Quantum Electronics, IEEE Journal of  (Volume:35 ,  Issue: 5 )

Date of Publication:

May 1999

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